for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 288 linear & power amplifiers - smt hmc499lc4 smt phemt medium power amplifier, 21 - 32 ghz v03.1208 general description features functional diagram the hmc499lc4 is a high dynamic range gaas phemt mmic medium power amplifi er housed in a leadless pb free rohs compliant smt package. operating from 21 to 32 ghz, the amplifi er provides 16 db of gain, +24 dbm of saturated power and 16% pae from a +5v supply voltage. the rf i/os are dc blocked and matched to 50 ohms for ease of use. the hmc499lc4 eliminates the need for wire bonding, allowing use of surface mount manufacturing techniques. output ip3: +34 dbm saturated power: +24 dbm @ 16% pae gain: 17 db supply: +5v @ 200ma 50 ohm matched input/output rohs compliant 4x4 mm smt package electrical specifi cations, t a = +25 c, vdd1, 2, 3 = 5v, idd = 200 ma* typical applications the hmc499lc4 is ideal for: ? point-to-point radios ? point-to-multi-point radios & vsat ? test equipment & sensors ? military end-use parameter min. typ. max. min. typ. max. min. typ. max. units frequency range 21 - 24 24 - 28 28 - 32 ghz gain 14 17 13 16 9 13 db gain variation over temperature 0.02 0.03 0.02 0.03 0.02 0.03 db/ c input return loss 10 8 8 db output return loss 11 12 8 db output power for 1 db compression (p1db) 20 23 20 23 20 23 dbm saturated output power (psat) 23.5 23.5 24 dbm output third order intercept (ip3) 31 34 33.5 dbm noise figure 6 5 5 db supply current (idd)(vdd = +5v, vgg = -0.8v typ.) 200 200 200 ma * adjust vgg between -2 to 0v to achieve idd = 200 ma typical.
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 289 input return loss vs. temperature output return loss vs. temperature broadband gain & return loss gain vs. temperature p1db vs. temperature psat vs. temperature -20 -15 -10 -5 0 5 10 15 20 18 20 22 24 26 28 30 32 34 36 s21 s11 s22 response (db) frequency (ghz) 0 2 4 6 8 10 12 14 16 18 20 22 20 21 22 23 24 25 26 27 28 29 30 31 32 33 +25 c +85 c -40 c gain (db) frequency (ghz) -20 -16 -12 -8 -4 0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 +25 c +85 c -40 c return loss (db) frequency (ghz) -15 -12 -9 -6 -3 0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 +25 c +85 c -40 c return loss (db) frequency (ghz) 10 14 18 22 26 30 20 21 22 23 24 25 26 27 28 29 30 31 32 33 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 10 14 18 22 26 30 20 21 22 23 24 25 26 27 28 29 30 31 32 33 +25 c +85 c -40 c psat (dbm) frequency (ghz) hmc499lc4 smt phemt medium power amplifier, 21 - 32 ghz v03.1208
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 290 linear & power amplifiers - smt power compression @ 22 ghz output ip3 vs. temperature noise figure vs. temperature gain, power & output ip3 vs. supply voltage @ 22 ghz reverse isolation vs. temperature power compression @ 30 ghz 20 24 28 32 36 40 20 21 22 23 24 25 26 27 28 29 30 31 32 33 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) 10 12 14 16 18 20 22 24 26 28 30 32 4.5 5 5.5 gain p1db psat ip3 gain (db), p1db (dbm), psat (dbm), ip3 (dbm) vdd supply voltage (vdc) -70 -60 -50 -40 -30 -20 -10 0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 +25 c +85 c -40 c isolation (db) frequency (ghz) 0 4 8 12 16 20 24 28 -12 -8 -4 0 4 8 12 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 4 8 12 16 20 24 28 -12 -8 -4 0 4 8 12 16 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 0 2 4 6 8 10 12 20 21 22 23 24 25 26 27 28 29 30 31 32 33 +25 c +85 c -40 c noise figure (db) frequency (ghz) hmc499lc4 smt phemt medium power amplifier, 21 - 32 ghz v03.1208
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 291 outline drawing absolute maximum ratings drain bias voltage (vdd1, vdd2, vdd3) +5.5 vdc gate bias voltage (vgg) -4 to 0 vdc rf input power (rfin)(vdd = +5 vdc) +20 dbm channel temperature 175 c continuous pdiss (t= 85 c) (derate 25 mw/c above 85 c) 2.25 w thermal resistance (channel to ground paddle) 40 c/w storage temperature -65 to +150 c operating temperature -40 to +85 c vdd (vdc) idd (ma) +4.5 193 +5.0 200 +5.5 207 typical supply current vs. vdd note: amplifi er will operate over full voltage ranges shown above. vgg adjusted to achieve idd= 200 ma at +5v. notes: 1. package body material: alumina. 2. lead and ground paddle plating: gold flash over nickel. 3. dimensions are in inches (millimeters). 4. lead spacing tolerance is non-cumulative. 5. package warp shall not exceed 0.05mm datum C c C 6. all ground leads and ground paddle must be soldered to pcb rf ground. hmc499lc4 smt phemt medium power amplifier, 21 - 32 ghz v03.1208 electrostatic sensitive device observe handling precautions
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com 11 11 - 292 linear & power amplifiers - smt pin number function description interface schematic 1, 5 - 8, 10 - 14, 18, 20, 22, 24 n/c no connection required. these pins may be connected to rf/dc ground without affecting performance. 2, 4, 15, 17 gnd package bottom has an exposed metal paddle that must also be connected to rf/dc ground. 3 rfin this pin is ac coupled and matched to 50 ohms. 9 vgg gate control for amplifi er. adjust to achieve id of 200 ma. please follow mmic amplifi er biasing procedure application note. external bypass capacitors of 100 pf, 1000 pf and 2.2 f are required. 16 rfout this pad is ac coupled and matched to 50 ohms. 23, 21, 19 vdd1, vdd2, vdd3 power supply voltage for the amplifi er. external bypass capacitors of 100 pf, 1000pf, and 2.2 f are required. pin descriptions application circuit component value c1 100 pf c2 1,000 pf c3 2.2 f hmc499lc4 smt phemt medium power amplifier, 21 - 32 ghz v03.1208
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com linear & power amplifiers - smt 11 11 - 293 evaluation pcb item description j1, j2 2.92 mm pc mount k-connector j3 - j8 dc pin c1 - c4 100 pf capacitor, 0402 pkg. c5 - c8 1,000 pf capacitor, 0603 pkg. c9 - c12 2.2f capacitor, tantalum u1 hmc498lc4 amplifi er pcb [2] 108535 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350. list of material for evaluation pcb 108537 [1] the circuit board used in this application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro- priate heat sink. the evaluation circuit board shown is available from hittite upon request. hmc499lc4 smt phemt medium power amplifier, 21 - 32 ghz v03.1208
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